NEWS
Open Innovations 2012
AIXTRON and Sigm Plus are going to participate in Moscow International Forum for Innovative Development. October 31 – November 3, 2012. Expocenter
More5x200 mm GaN-on-Si Technology for the AIX G5 Reactor Platform
AIXTRON SE has introduced a 5x200 mm GaN-on-Si technology package for its AIX G5 Planetary Reactor platform
MoreEpiGaN Successfully Starts 8-inch GaN-on-Si Development on AIXTRON Reactors
EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration.
MoreSaturn JSC expands solar cell production in Russia with further AIXTRON MOCVD system
Saturn JSC has ordered AIX 2800 G4-R 15x4-inch configuration deposition system including an automated wafer transfer system.
MoreOptogan Group becomes first in Europe to order AIXTRON CRIUS II systems for GaN LED production
CJSC Optogan has ordered two CRIUS II deposition systems, which will be used for gallium nitride (GaN) high-brightness LED production.
MoreAIXTRON’s New Generation AIX G5 System achieves aggressive productivity targets at Epistar
Next generation MOCVD Platform AIX G5 HT has demonstrated high quality GaN deposition at very high growth rates and high pressure above 600mbar and superior GaN/InGaN uniformities
MoreEPIWAFERS
The metal organic chemical vapor deposition (MOCVD) growth facility is located in Moscow, Russia and based on several horizonal reactors [see Technology]. Our installations suitable to grow most III-V compound semiconductors for different device applications.
Epiwafers
Most developed epiwafers are for laser diodes (LD) applications. In the list below you can find some sample epistructures developed in our company:
- AlGaAs/GaAs Epiwafers for 780-870nm Laser Diodes
- InGaAs/AlGaAs/GaAs Epiwafers for 900-1060nm Laser Diodes
- InGaAsP/InP Epiwafers for 1200-1600nm Laser Diodes
- Epitaxial Structures for 1310 and 1550nm Uncooled Laser Diodes
- InGaAs/InP PIN Photodiodes Epiwafers
You are welcome to discuss with us growth of other epitaxial structures based on developed material systems.