NEWS
Open Innovations 2012
AIXTRON and Sigm Plus are going to participate in Moscow International Forum for Innovative Development. October 31 – November 3, 2012. Expocenter
More5x200 mm GaN-on-Si Technology for the AIX G5 Reactor Platform
AIXTRON SE has introduced a 5x200 mm GaN-on-Si technology package for its AIX G5 Planetary Reactor platform
MoreEpiGaN Successfully Starts 8-inch GaN-on-Si Development on AIXTRON Reactors
EpiGaN, a new customer and a start-up manufacturer of III-Nitrides epitaxial material, has successfully commissioned two new MOCVD systems, able to operate either in multiple 6” or in 8” configuration.
MoreSaturn JSC expands solar cell production in Russia with further AIXTRON MOCVD system
Saturn JSC has ordered AIX 2800 G4-R 15x4-inch configuration deposition system including an automated wafer transfer system.
MoreOptogan Group becomes first in Europe to order AIXTRON CRIUS II systems for GaN LED production
CJSC Optogan has ordered two CRIUS II deposition systems, which will be used for gallium nitride (GaN) high-brightness LED production.
MoreAIXTRON’s New Generation AIX G5 System achieves aggressive productivity targets at Epistar
Next generation MOCVD Platform AIX G5 HT has demonstrated high quality GaN deposition at very high growth rates and high pressure above 600mbar and superior GaN/InGaN uniformities
MoreEPITAXIAL STRUCTURES FOR 1200-1600 NM LASER DIODES
Typical structure
We provide these data for reference only, structures may include different features like as tailored doping profile for low absorpton losses and highpower single mode operation, special broad waveguide (BWG) design for high power operation.
Layer # |
Layer Name |
Layer Composition |
Wavelength, (µm) |
Doping Level (cm-3) |
Layer Thickness (nm) |
9 |
Contact layer |
p+-InGaAsP:Zn |
1.38 |
2x1018 |
200 |
8 |
P-cladding |
p-InP:Zn |
- |
5x1017 |
1500 |
7 |
Stop Layer |
p-InGaAsP:Zn |
1.30 |
5x1017 |
7 |
6 |
P-cladding |
p-InP:Zn |
- |
2x1017 |
100...200 |
5 |
Waveguide |
InGaAsP |
1.06 (for 1.3µm LD) |
undoped |
100 |
4 |
4xQW |
InGaAsP |
For 1.3 or 1.55µm LDs |
undoped |
3...5 |
3 |
3xBarriers |
InGaAsP |
1.06 (for 1.3µm LD) |
undoped |
15...17 |
2 |
Waveguide |
InGaAsP |
1.06 (for 1.3µm LD) |
undoped |
100 |
1 |
N-cladding |
n-InP:Si |
- |
5x1017 |
700 |
|
Substrate |
n+-InP:S |
>3 x1018 |
350µm |
Typical thickness nonuniformity ±(1-3)% (depends on MOCVD system)
Typical doping level nonuniformity ±10%
Typical 4QW "ridge" SM LD parameters
Stripe width |
4.5 µm |
Stripe length |
400...600 µm |
Back coating |
80% reflection (for monitor PD) |
Voltage |
< 2 V |
Divergence |
(18...20) x (35...45) deg |
Spectra FWHM |
< 3 nm |
No TEC required up to 60°C (with output power 5-10 mW at 60°C) |
Wavelength (µm) |
Threshold Current (mA) |
Power (mW) |
Current (mA) |
1.300 |
<23 |
10 |
65 |
20 |
100 |
||
30 |
150 |
||
1.550 |
<25 |
10 |
70 |
20 |
115 |
||
30 |
170 |